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In this article, we proposed a novel 'I' shape floating gate applicable to the sub-70 nm flash memory cell with high performance and scalability. It has modified floating gate of conventional flash memory to have high coupling-ratio (CR), low effect of interference or cross-talk. Specifically, it has $13% higher CR and $33=46% lower effect of cross-talk of the bitline/word-line state than those of conventional flash memory cell with scale-downed geometry. In addition, 'I' shape flash memory cell shows improved characteristics about programming time, drain disturbance, read current, sub-threshold swing, and drain induced barrier lowering than conventional flash memory cell.

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