Graphene is a distinct two-dimensional material that offers a wide range of opportunities for membrane applications because of ultimate thinness, flexibility, chemical stability, and mechanical strength. We demonstrate that few- and several-layered graphene and graphene oxide (GO) sheets can be engineered to exhibit the desired gas separation characteristics. Selective gas diffusion can be achieved by controlling gas flow channels and pores via different stacking methods. For layered (3- to 10-nanometer) GO membranes, tunable gas transport behavior was strongly dependent on the degree of interlocking within the GO stacking structure. High carbon dioxide/nitrogen selectivity was achieved by well-interlocked GO membranes in high relative humidity, which is most suitable for postcombustion carbon dioxide capture processes, including a humidified feed stream.

The conductivity of graphite oxide films is modulated using reducing agents. It is found that the sheet resistance of graphite oxide film reduced using sodium borohydride (NaBH4) is much lower than that of films reduced using hydrazine (N2H4). This is attributed to the formation of CN groups in the N2H4 case, which may act as donors compensating the hole carriers in reduced graphite oxide. In the case of NaBH4 reduction, the interlayer distance is first slightly expanded by the formation of intermediate boron oxide complexes and then contracted by the gradual removal of carbonyl and hydroxyl groups along with the boron oxide complexes. The fabricated conducting film comprising a NaBH4‐reduced graphite oxide reveals a sheet resistance comparable to that of dispersed graphene.

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We investigated the modulation of optical properties of single-walled carbon nanotubes (SWCNTs) by AuCl 3 doping. The van Hove singularity transitions (E 11 (S), E 22 (S), E 11 (M)) in absorption spectroscopy disappeared gradually with an increasing doping concentration and a new peak appeared at a high doping concentration. The work function was downshifted up to 0.42 eV by a strong charge transfer from the SWCNTs to AuCl 3 by a high level of p-doping. We propose that this large work function shift forces the Fermi level of the SWCNTs to be located deep in the valence band, i.e., highly degenerate, creating empty van Hove singularity states, and hence the work function shift invokes a new asymmetric transition in the absorption spectroscopy from a deeper level to newly generated empty states.

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