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Interfhcial reactions, surface morphology, and current-voltage (I-V) characteristics of Ti/AI/4H-SiC and TiN/AI/4H-SiC were studied befbre and after hightemperature annealing. It was observed that surfhce smoothness of the samples was not significantly aftbcted by the heat treatment at up to 900°C, in contrast to the case of Al/SiC. Transmission electron microscopy (TEM) observation of the Ti(TiN)/AI/SiC interfhce showed that A1 layer reacted with the SiC substrate at 900°C and Ibrmed an AI-Si-(Ti)-C compound at the metal/SiC interfhce, which is similar to the case of the Al/SiC interfhce. The I-V measurement showed reasonable ohmic properties for the Ti/A1 films, indicating that the films can be used to stabilize the Al/SiC contact by protecting the A1 layer from the potential oxidation and evaporation problem, while maintaining proper contact properties.