We measure end-of-line polysilicon waveguide propagation losses of ~6-15 dB/cm across the telecommunication O-, E-, S-, C- and L-bands in a process representative of high-volume product integration. The lowest loss of 6.2 dB/cm is measured at 1550 nm in a polysilicon waveguide with a 120 nm x 350 nm core geometry. The reported waveguide characteristics are measured after the thermal cycling of the full CMOS electronics process that results in a 32% increase in the extracted material loss relative to the as-crystallized waveguide samples. The measured loss spectra are fit to an absorption model using defect state parameters to identify the dominant loss mechanism in the end-of-line and as-crystallized polysilicon waveguides.

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A functional DRAM with higher data retention and NH3. CVD TiN was deposited using TiCl4 and NH3. IOOA characteristics than a planar access device has been demonstrated, blanket films were characterized by x-ray reflectivity (XRR) using a metal gate recessed access device (RAD). Chemical vapor and x-ray diffraction (XRD). As observed from the XRD deposition (CVD) and atomic layer deposition (ALD) were used to patterns ( Fig.3 and 4), CVD TiN films are crystalline with deposit titanium nitride (TiN) and tantalum nitride (TaN), colu respectively. CVD TiN and ALD TaN-CVD TiN laminate gate columnar grains, and grain growth post heat treatment is stacks were integrated with a RAD module. ALD TaN-CVD TiN minimal. ALD TaN films are nanocrystalline as deposited and laminate gates showed enhanced drive current (IDs), higher exhibit non-uniform crystallinity post heat treatment. Blanket transconductance (GM), higher mobility (PEFF) and reduced off stress variation of TiN film versus thickness is shown in Fig.5. current (IOFF) characteristics compared to CVD TiN gates. Device Density (extracted from XRR) variation due to heat treatment is characteristics and reliability data for both the planar devices and RADs are presented. The ALD TaN-CVD TiN laminate metal gate plotted in Flg.6 for TaN and TiN. TEM images (Fig 7) of 0ouA RAD showed much improved data retention characteistics TaN flm post heat treatment show crystallites in an amorphous compared to a conventional planar device with a poly silicon gate. matrix. Post heat treatment, the interface of TaN/SiON was The optimum thickness of ALD TaN in the laminate stack is smoother and more distinct compared to the rough TiN/SiON discussed.

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