In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 × 20 μm(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm.

We have developed organic photoconductive film (OPF) CMOS image sensors with pixel structures different from those of a conventional silicon image sensors, in which, the organic thin film for photoelectric conversion and the charge storage part for signal charge accumulation are completely independent. In this paper, we focus on two unique features of the OPF image sensor: (1) technology that realizes over 120 dB simultaneous-capture wide dynamic range, (2) global shutter technology achieving high saturation signals per unit square that is 10 dB higher than that of silicon image sensors with the global shutter function, without sacrificing pixel area. In addition, we have developed a test chip that realizes a high resolution of 8K4K, a high frame rate of 60 fps, a high saturation signals of 450 ke−, and the global shutter function simultaneously. These features of the OPF image sensor will contribute to significant progress in imaging and sensing fields.

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A polarization analyzing complementary metal oxide semiconductor (CMOS) image sensor with a fine on-chip metal wire grid polarizer in the 65-nm standard process is presented. The extinction ratio is an important characteristic for a polarizer that depends largely on the feature size of the metal wire grid pitch and the fabrication CMOS process. To improve the extinction ratio, we designed and fabricated a sensor chip in the 65-nm process. The design rules of the 65-nm process realize the fine metal wire grid pitch compared with the wavelength of visible light. Improvement of extinction ratio is expected by such a fine structure. With the fabricated sensor, an extinction ratio greater than 40 was achieved. The difference between the measured value and the simulation value of the extinction ratio, and pixel crosstalk of the fabricated sensor are discussed.