Polarization Analyzing Image Sensor with On-Chip Metal Wire Grid Polarizer in 65-nm Standard Complementary Metal Oxide Semiconductor Process

Shishido, Sanshiro; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

doi:10.7567/jjap.50.04dl01

Cited by 13 publications

(14 citation statements)

References 11 publications

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“…The value is consistent with the simulation (Fig. 2) and the extinction ratio for the single-pixel photo-sensor TEG 11) .…”

Section: Performance Of the Polarization-supporting

confidence: 91%

“…Prior to the CMOS sensor design, we performed numerical simulations to estimate expected performance of the polarization-analyzing CMOS image sensor with sub-100 nm CMOS process 11) . The structure of on-pixel wire grid polarizer was simplified into a model structure with uniform cross section that is periodic in one dimension, as shown in an inset of (TE) to the grid structure.…”

Section: Simulated Polarization-analyzing Performance Of the On-chip mentioning

confidence: 99%

“…Considering the basic electromagnetic theory, the straightforward way to improve the extinction ratio is to reduce the pitch of the wire grid structure. We have reported that polarization-analyzing active pixel sensor TEGs (test element groups) fabricated with 65 nm standard CMOS process have a significantly higher polarization separation performance 11) . Based on this result, in this work, we designed and characterized the performance of a polarization-analyzing CMOS image sensor using 65 nm standard CMOS process.…”

Section: Introductionmentioning

confidence: 99%

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[Paper] Demonstrations of Polarization Imaging Capability and Novel Functionality of Polarization-Analyzing CMOS Image Sensor with 65 nm Standard CMOS Process

Tokuda

Sasagawa

Wakama

et al. 2014

MTA

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A polarization-analyzing CMOS image sensor with 65 nm standard fabrication process was designed and characterized. Polarization-analyzing image sensor pixel was realized using wire grid structures designed with a metal wiring layer within the standard CMOS process. Taking advantage of sub-100 nm CMOS process, a fine grid pitch was realized. Polarization-analyzing performance significantly higher than our previous sensors with 0.35 µm CMOS process was obtained. Polarization imaging capability was demonstrated for a scene with local polarization variation. With an aim of further performance improvement, subtraction readout scheme and multiple layer stacked on-pixel polarizer were proposed and discussed. AbstractKey words:

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“…The value is consistent with the simulation (Fig. 2) and the extinction ratio for the single-pixel photo-sensor TEG 11) .…”

Section: Performance Of the Polarization-supporting

confidence: 91%

Section: Simulated Polarization-analyzing Performance Of the On-chip mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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[Paper] Demonstrations of Polarization Imaging Capability and Novel Functionality of Polarization-Analyzing CMOS Image Sensor with 65 nm Standard CMOS Process

Tokuda

Sasagawa

Wakama

et al. 2014

MTA

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“…While time resolved measurements have been performed on bulk-like nanoribbons (3 μm thick) 173 , atomically thin crystals have yet to be investigated and it remains to be seen whether the TMTCs present similar many body interactions (exciton-exciton annihilation) as the TMDCs in atomically thin samples [201][202][203][204][205] . Perhaps the most intriguing direction though is the application of MX3s in creating on-chip polarizers [36][37][38][39] , polarization sensitive photodetectors [40][41][42] , and devices with polarized light emission 28, 43,44 . Finally, the TMTCs must be contrasted with the recently (re)discovered anisotropic 2D materials black phosphorus and rhenium disulphide (ReS2).…”

Section: Discussionmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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“…Although the concept of microwave polariser based on subwavelength gratings dates back to the 19 th century, it could not be adapted to the optical domain until the development of microfabrication technologies in the 1960s [1]. Since then, these so-called Wire-Grid Polarisers (WGP) have been used frequently as they offer small footprints and large acceptance angles, and can now be found in daily-life devices such as sensors [2] or displays. Current research focuses onto low-cost and high volume manufacturing processes, UV applications [3], as well as high performance.…”

Section: Introductionmentioning

confidence: 99%

Impact of the slit geometry on the performance of wire-grid polarisers

Mélen¹,

Rosenfeld²,

Weinfurter³

2015

Opt. Express

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Abstract:Wire-grid polarisers are versatile and scalable components which can be engineered to achieve small sizes and extremely high extinction ratios. Yet the measured performances are always significantly below the predicted values obtained from numerical simulations. Here we report on a detailed comparison between theoretical and experimental performances. We show that the discrepancy can be explained by the true shape of the plasmonic structures. Taking into account the fabrication details, a new optimisation model enables us to achieve excellent agreement with the observed response and to re-optimise the grating parameters to ensure experimental extinction ratios well above 1,000 at 850 nm. B 50, 4795-4801 (1994). 5. T. Thio, K. M. Pellerin, R. a. Linke, H. J. Lezec, and T. W. Ebbesen, "Enhanced light transmission through a single subwavelength aperture," Opt. Lett. 26, 1972Lett. 26, -1974Lett. 26, (2001. 6. S. Astilean, P. Lalanne, and M. Palamaru, "Light transmission through metallic channels much smaller than the wavelength," Opt. Commun. 175, 265-273 (2000). 7. Y. Takakura, "Optical resonance in a narrow slit in a thick metallic screen," Phys. Rev. Lett. 86, 5601-5603 (2001). Wang, "Large area, 38 nm half-pitch grating fabrication by using atomic spacer lithography from aluminum wire grids," Nano Lett. 6, 2723Lett. 6, -2727Lett. 6, (2006

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Polarization Analyzing Image Sensor with On-Chip Metal Wire Grid Polarizer in 65-nm Standard Complementary Metal Oxide Semiconductor Process

Cited by 13 publications

References 11 publications

[Paper] Demonstrations of Polarization Imaging Capability and Novel Functionality of Polarization-Analyzing CMOS Image Sensor with 65 nm Standard CMOS Process

[Paper] Demonstrations of Polarization Imaging Capability and Novel Functionality of Polarization-Analyzing CMOS Image Sensor with 65 nm Standard CMOS Process

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Impact of the slit geometry on the performance of wire-grid polarisers

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