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A polarization-analyzing CMOS image sensor with 65 nm standard fabrication process was designed and characterized. Polarization-analyzing image sensor pixel was realized using wire grid structures designed with a metal wiring layer within the standard CMOS process. Taking advantage of sub-100 nm CMOS process, a fine grid pitch was realized. Polarization-analyzing performance significantly higher than our previous sensors with 0.35 µm CMOS process was obtained. Polarization imaging capability was demonstrated for a scene with local polarization variation. With an aim of further performance improvement, subtraction readout scheme and multiple layer stacked on-pixel polarizer were proposed and discussed. AbstractKey words:

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