A polarization analyzing CMOS image sensor with metal wire grid in 65-nm standard CMOS technology

Polarisation analysing complementary metal‐oxide semiconductor image sensor in 65‐nm standard CMOS technology

“…The extinction ratio can be improved by narrowing the grid pitch. In the previous studies, we achieved an extinction ratio of 16.1 dB with fine pitch metal wire grids obtained using 65‐nm standard CMOS technology [8, 9]. Based on this result, in the present study, we design and fabricate an image sensor with high‐extinction‐ratio polarisers using 65‐nm standard CMOS technology.…”