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The CCTMO (CaCu 3 Ti 3.5 Mn 0. 5 O 12) ceramic has been prepared by using the semi-wet method and sintered at 1223 K, 1323 K, and 1373 K, respectively for 8 h. The XRD, as well as TEM, have been to confirm the phase formation of CCTMO ceramics. The crystalline size of CCTMO was found in the range of 38-70 nm at different sintering temperatures. The route-mean square, as well as average roughness, was occurred by AFM technique 7.55 nm and 9.23 nm, respectively, sintered at 1373 K. The P-E hysteresis loop shows the ferromagnetic behavior of CCTMO at room temperature for all samples. The zero-field cooled (ZFC), field cooled (FC) and Magnetic hysteresis (M-H) curve shows temperature-dependent ferromagnetic behavior of CCTMO ceramic. The dielectric constant (ɛ r) at 10 kHz decreases with increasing sintering temperature due to semiconducting grains and insulating boundaries supported by internal barrier layer capacitance modal (IBLC) in Mn-doped CCTO ceramic.

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The Mn-doped CCTO (CaCu 3 Ti (4−x) Mn x O 12 system x = 0.25, 0.50 and 1.00) ceramic has been synthesized by using metal nitrates and solid TiO 2 powder sintered at 1223 K for 8 h. The crystal phase of CCTMO was confirmed by the XRD at 1223 K for 8 h. The phase-structure, as well as microstructure, was examined by XRD and SEM, respectively. The SEM micrograph revealed the effect of Mn concentration on grain size and grain formation. The bright-field TEM image of the system confirmed the particle size in the range of 22-30 nm. The stoichiometry and purity of synthesized material were observed by EDX. The investigated dielectric permittivity and tangent loss were found to be 150 and 0.6, respectively, at room temperature (10 kHz), which may be used in electronic devices.