A pressure sensor based on two dimensional photonic crystal structure is presented. The structure considered for sensing is a lattice of air holes surrounded by semiconductor material. A waveguide with central microcavity is formed by filling air holes with semiconductor material. The sensing principle depends upon the shifting of central wavelength of peak towards higher wavelength region when the pressure is raised. The proposed pressure sensor can work in the range 0-5 GPa. Using this structure, two semiconductors, Si and GaAs, have been taken for analysis. It is found that shifting of resonance wavelength with pressure is more pronounced in GaAs than Si. In the dynamic range 0-5 GPa, sensitivity for sensor with Si is estimated as 1.674 nm/GPa while it is 17.00 nm/GPa for sensor with GaAs. The quality factor and figure of merit (FOM) is also found to be higher for GaAs sensor.

No abstract

A biosensor device using one dimensional photonic crystal is designed for monitoring haemoglobin concentration in blood. Using the transfer matrix approach, the transmission spectra of a multilayered crystal structure (AB)7/ADA/(BA)7 is calculated. GaN is utilised as a media with a high refractive index (A), whereas air (B) is employed as a medium with a low refractive index. Here, defect layer (D) is chosen as blood sample. A resonant peak within photonic band gap can be shifted by a change in haemoglobin concentration in transmission spectrum. The sensor has the values of sensitivity, quality factor, figure of merit and detection limit as 439 nm/RIU, ~4.91×105, ~3.29×105/RIU and ~ 3.03 ×10-7 RIU respectively.

In this work, a two-dimensional photonic crystal ring resonator based temperature sensor is investigated. The device consists of a hexagonal array of air holes surrounded by the base material of germanium (Ge). The sensing mechanism is based on the  shifting  of transmission peak with  refractive index changes in Ge induced  by variation  of temperature. Simulation results are obtained using finite difference time domain method (FDTD). The photonic band gap is studied by plane wave expansion method (PWE). The sensor has high sensitivity of 270 pm/K and high quality factor of 2028.86 with` wide range of temperature detection between 300 K to 800 K. The size of the structure is  112.91 (µm)2 and appropriate for sensing applications in nanotechnology.

A pressure sensor based on two dimensional photonic crystal structure is presented. The structure considered for sensing is a lattice of air holes surrounded by semiconductor material. A waveguide with central microcavity is formed by filling air holes with semiconductor material. The sensing principle depends upon the shifting of central wavelength of peak towards higher wavelength region when the pressure is raised. The proposed pressure sensor can work in the range 0-5 GPa. Using this structure, two semiconductors, Si and GaAs, have been taken for analysis. It is found that shifting of resonance wavelength with pressure is more pronounced in GaAs than Si. In the dynamic range 0-5 GPa, sensitivity for sensor with Si is estimated as 1.674 nm/GPa while it is 17.00 nm/GPa for sensor with GaAs. The quality factor and figure of merit (FOM) is also found to be higher for GaAs sensor.