In this paper, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors "p" and "n" plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.

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We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of the work-function difference between silicon carbide and metal electrodes. Utilizing the 2-D TCAD simulation, we represent the performance of the proposed doping-less silicon carbide p-i-n diode is analogous to the silicon carbide Schottky diode in terms of forward and reverse characteristics as well as temperature dependency. As opposed to the conventional (doped) silicon carbide p-i-n diode, the doping-less silicon carbide p-i-n diode holds a lower ON-state voltage drop and higher reverse saturation current. Although the doping-less silicon carbide p-i-n diode has the merits of the silicon carbide Schottky diode, but it has leverage over the corresponding counterparts by eliminating the doping and the high thermal budget fabrication processes.INDEX TERMS charge plasma, doping-less, p-i-n diode, temperature dependency,