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Positive photoresist h a s been investigated for use as an implantation mask for the fabrication of GaAs digital integrated circuits by selective ion implantation. Proper photoresist processing and surface cleanliness of GaAs have been found to play a significant role in obtaining good selectivity and isolation between devices. n-siGaAs-n structures were fabricated and characterized by their breakdown voltage, leakage current and capacitance measurements. The results also show that the introduction of an intermediate layer of Si,N, between the photoresist and GaAs further improves the isolation. The results obtained have been compared with reported results on the proton bombardment isolation process. Using the developed selective implantation process, a quad two-input NOR gate was fabricated and tested.

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