For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e− for the simple integration CMS and 75 dB and 2.2 e− for the folding integration CMS, respectively, are obtained.

A high-performance CMOS image sensor (CIS) with 13-b column-parallel single-ended cyclic ADCs is presented. The simplified single-ended circuits for the cyclic ADC are squeezed into a 5.6-μm-pitch single-side column. The proposed internal reference generation and return-to-zero digital signal feedback techniques enhance the ADC to have low read noise, a high resolution of 13 b, and a resulting dynamic range of 71 dB. An ultralow vertical fixed pattern noise of 0.1 e − rms is attained by a digital CDS technique, which performs A/D conversion twice in a horizontal scan period (6 μs). The implemented CIS with 0.18-μm technology operates at 390 frames/s and has 7.07-V/lx • s sensitivity, 61-μV/e − conversion gain, 4.9-e − rms read noise, and less than 0.4 LSB differential nonlinearity. Index Terms-CMOS image sensor (CIS), column-parallel cyclic ADC, digital correlated double sampling (CDS), low random noise, low vertical fixed pattern noise (VFPN), single-ended ADC.

Palm region extraction is one of the most important processes in palmprint recognition, since the accuracy of extracted palm regions has a significant impact on recognition performance. Especially in contactless recognition systems, a palm region has to be extracted from a palm image by taking into consideration a variety of hand poses. Most conventional methods of palm region extraction assume that all the fingers are spread and a palm faces to a camera. This assumption forces users to locate his/her hand with limited pose and position, resulting in impairing the flexibility of the contactless palmprint recognition system. Addressing the above problem, this paper proposes a novel palm region extraction method robust against hand pose. Through a set of experiments using our databases which contains palm images with different hand pose and the public database, we demonstrate that the proposed method exhibits efficient perfomance compared with conventional methods.

This paper presents a CMOS time-of-flight (ToF) range image sensor using high-speed lock-in pixels with background light canceling capability. The proposed lock-in pixel uses MOS gate-induced lateral electric field control of depleted potential of pinned photodiode for implementing a multiple-tap charge modulator while achieving a high-speed charge transfer for high-time resolution. A TOF image sensor with 320 x 240 effective pixels is implemented using a 0.11-µm CMOS image sensor process. The TOF sensor has a range resolution of less than 12 mm without background light and 20 mm under background line for the range from 0.8 to 1.8 m and integration time of 50 ms. The effectiveness of in-pixel background light canceling with a three-tap output pixel is demonstrated.INDEX TERMS CMOS image sensor, depth image, pinned photodiode, time-of-flight (ToF), lateral electric field charge modulator (LEFM) I. INTRODUCTION

The tumor suppressor Fbxw7 (also known as Sel-10, hCdc4, hAgo, or Fbw7) is an F-box protein that functions as the substrate-recognition subunit of an SCF ubiquitin ligase complex and targets a group of oncoproteins for degradation. We now show that Fbxw7 regulates the proliferation and differentiation of keratinocytes by mediating the degradation of c-Myc and Notch proteins. Fbxw7-deficient keratinocytes showed an increased proliferative capacity that was dependent on the accumulation of c-Myc but not on that of Notch. Fbxw7 deficiency also resulted in the premature differentiation of keratinocytes in a manner dependent on both c-Myc and Notch. Although Fbxw7-deficient keratinocytes proliferated excessively in vitro, loss of Fbxw7 did not predispose keratinocytes to the formation of squamous cell carcinoma in vivo induced by the expression of oncogenic Ras, possibly because the stem cell population of keratinocytes becomes exhausted as a result of enhanced Notch activity. Indeed, suppression of Notch signaling by additional ablation of RBP-J in Fbxw7-deficient keratinocytes conferred a more aggressive tumorigenic capacity. Collectively, these results indicate that Fbxw7 controls the proliferation and differentiation of keratinocytes, and that it exerts both inhibitory and stimulatory actions in skin carcinogenesis by counteracting the proliferation-promoting effect of c-Myc and the tumor-suppressive effect of Notch, respectively.