The single-correlator conformal bootstrap is solved numerically for several values of dimension 4 > d > 2 using the available SDPB and Extremal Functional methods. Critical exponents and other conformal data of low-lying states are obtained over the entire range of dimensions with up to four-decimal precision and then compared with several existing results. The conformal dimensions of leading-twist fields are also determined up to high spin, and their d-dependence shows how the conformal states rearrange themselves around d = 2.2 for matching the Virasoro conformal blocks in the d = 2 limit. The decoupling of states at the Ising point is studied for 3 > d > 2 and the vanishing of one structure constant at d = 3 is found to persist till d = 2 where it corresponds to a Virasoro null-vector condition. arXiv:1811.07751v2 [hep-th]

We have developed electrolyte-gated sensors based on a fieldeffect transistor (FET) consisting of horizontally aligned single-walled carbon nanotubes (CNTs) synthesized on single-crystal quartz. Dense well-aligned CNTs serving as device channels enabled high current and large transconductance. Owing to these excellent device properties, the pH resolution was much better in the aligned-channel CNTFETs than in single-channel devices. For immunosensing, selective detection of human immunoglobulin E (IgE) by using aptamer-functionalized CNTFETs was demonstrated in the presence of nontarget proteins at much higher concentration. Moreover, measurements of sensor response versus IgE concentration produced data that fit well to the Langmuir adsorption isotherm. The developed sensors with aligned channels exhibited a drain current of 400-fold that of single-channel devices. Therefore, aligned-channel CNTFETs are useful for highly sensitive and practicable solution sensing.

Abstract:We investigate the correspondence between two dimensional topological gauge theories and quantum integrable systems discovered by Moore, Nekrasov, Shatashvili. This correspondence means that the hidden quantum integrable structure exists in the topological gauge theories. We showed the correspondence between the G/G gauged WZW model and the phase model in JHEP 11 (2012) 146 (arXiv:1209.3800). In this paper, we study a one-parameter deformation for this correspondence and show that the G/G gauged WZW model coupled to additional matters corresponds to the q-boson model. Furthermore, we investigate this correspondence from the viewpoint of the commutative Frobenius algebra, the axiom of the two dimensional topological quantum field theory.

We investigate the G/G gauged Wess-Zumino-Witten model on a Riemann surface from the point of view of the algebraic Bethe Ansatz for the phase model. After localization procedure is applied to the G/G gauged Wess-Zumino-Witten model, the diagonal components for group elements satisfy Bethe Ansatz equations for the phase model. We show that the partition function of the G/G gauged Wess-Zumino-Witten model is identified as the summation of norms with respect to all the eigenstates of the Hamiltonian with the fixed number of particles in the phase model. We also consider relations between the Chern-Simons theory on $S^1\times\Sigma_h$ and the phase model.Comment: 15 pages.v2: published versio

Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO2 layer, and metal electrode comprise a metal-oxide-semiconductor (MOS) capacitor due to the presence of defects at the interface between the Si substrate and SiO2 layer. The difference in the diffusion time of the intrinsic major carriers (electrons) and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.