Silicon carbide (SiC) has superior material properties appropriate for transistor applications at high frequency, high voltage, high power and high temperature. These properties give SiC transistors low conduction losses and fast switching capability. This paper addresses the dynamic characteristics of available SiC power transistors including JFETs, BJTs and MOSFETs which are quite promising for smart grid applications. A standard double pulse test with a clamped inductive load has been used for dynamic characterization of the power transistors at different temperatures, load conditions and configurations.

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