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The PIN diode is a promising device in the field of power electronics due to its lower reverse leakage current and lower capacitance. Power electronics industry searches suitable semiconductors as conventional silicon saturates in context of impedance performances with a specified device configuration in the analysis of PIN diode. This paper considers the different materials like Si, Ge, GaAs, SiC-3C, SiC-4H, SiC-6H, GaN-wZ, GaN-zB, InAs to study the variation of intrinsic resistance, junction resistance and total resistance with respect to forward current as well as to study these same parameters with respect to width of the intrinsic region. The characteristics of intrinsic, junction and total resistances of PIN diodes with 10mA forward bias current and 50 micron width of the intrinsic region are noted. Finally it concludes and proposes the superior semiconductor material for PIN diode.

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