Search of appropriate semiconductor for PIN Diode fabrication in terms of resistance analysis

Abstract

The PIN diode is a promising device in the field of power electronics due to its lower reverse leakage current and lower capacitance. Power electronics industry searches suitable semiconductors as conventional silicon saturates in context of impedance performances with a specified device configuration in the analysis of PIN diode. This paper considers the different materials like Si, Ge, GaAs, SiC-3C, SiC-4H, SiC-6H, GaN-wZ, GaN-zB, InAs to study the variation of intrinsic resistance, junction resistance and total resistance with respect to forward current as well as to study these same parameters with respect to width of the intrinsic region. The characteristics of intrinsic, junction and total resistances of PIN diodes with 10mA forward bias current and 50 micron width of the intrinsic region are noted. Finally it concludes and proposes the superior semiconductor material for PIN diode.

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

“…Carrier lifetimes vary in literature for 3C-SiC with the best reported measured values of 10-15 μs [71]. Additionally, authors in [72] claim lifetime values are equal 0.5 μs, though without specifying the corresponding doping concentration. These values are strongly dependent on the quality of each unique heteroepitaxially grown material layer and are expected to lower due to electrically active traps.…”

“…However, most SiC devices are characterized by much smaller k values. For the 3C-SiC, the majority of experimental works determine its thermal conductivity at 3.2 W cm −1 K −1 , further for the 4H-SiC at the value of 3.7 W cm −1 K −1 [40,72,77]. Coefficient A (cm 6 s −1 ) 0.3×10 −31 0.2×10 −31 Coefficient B (cm 6 s −1 ) 0 0 Coefficient C (cm 6 s −1 ) 0 0 Coefficient H 1.9 1.9 N 0 (cm −3 )…”

Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC

“…Carrier's lifetime vary in literature for 3C-with best reported measured values of 10-15μs [41]. Additionally, authors in [42] claim lifetime values equal to 0.5μs, though without specifying the corresponding doping concentration. These values are strongly dependent on the quality of each unique heteroepitaxially grown material layer and are expected to lower due to electrical active traps.…”

“…Hence we adopt the values existing for 4H technology, as in all sources they are approximately of the same magnitude. Inspecting the values given in [42], lifetime in 3C-SiC is slightly higher than 4H-SiC, thus we determine a lower reference doping concentration (Nref). However, introducing deep levels in the physical model of 3C-SiC will have a great affection on the lifetimes.…”