In order to construct a reliable parameter set for the physical modeling of 4H-SiC, we are collecting and examining the physical parameters. The results of mobility measurement are presented and compared with the built-in model in the device simulator. The doping dependence of the electron mobility is in agreement with the built-in model, whereas that of the hole mobility is different from the built-in model in the higher doping region. Further, the anisotropy of the electron and hole mobility is investigated. The anisotropy of the electron mobility
The optimization of the Schottky barrier height (SBH) and the maximum electric fields at the interface of a 4H-SiC Schottky barrier diode (SBD) is discussed, considering the reverse leakage current due to tunneling process. We first show that the reverse characteristics of a Ti/4H-SiC SBD are well described by the tunneling theory. Based on the tunneling theory, we show that the maximum electric field decreases as the Schottky barrier height decreases, and becomes smaller than the avalanche breakdown field of SiC. The on-state voltage as a function of the SBH is calculated, considering the specification of a leakage current. The calculated results show that the optimum SBH for a 4H-SiC SBD of 600V class is 0.9eV and that of 2000V class is 1.2eV.
The mobility limiting mechanism of a two-dimensional hole gas in a strained Si 0.8 Ge 0.2 /Si modulation doped heterostructure was investigated at 4.2 K by means of a back-gating measurement of the mobility. It was shown that the mobility decreased with increasing positive back-gate voltage at a fixed hole density. A self-consistent calculation of the wavefunction indicated that the wavefunction was pushed toward the hetero-interface when a more positive back-gate bias was applied. A comparison between the observed and the calculated mobility modulation due to the wavefunction deformation revealed that the Coulomb scattering by the ionized impurities in the spacer and/or at the hetero-interface limits the mobility.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.