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In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/ K] has more characteristics of the TCR. And 8∼12 um wavelength region close to 70% in the absorption characteristic.

A uncooled infrared ray sensor used in an infrared thermal imaging detector has many advanta ges. But because the uncooled infrared ray sensor is made by MEMS (micro-electro-mechanical system) process variation of offset is large. In this paper, to solve process variation of offset a ROIC for uncooled infrared ray sensor that has process variation of offset compensation technique using differential delta sa mpling and reference signal compensation circuit was proposed. As a result of simulation that uses the pr oposed ROIC, it was possible to acquire compensated output characteristics without process variation of o ffsets.Keywords: Readout IC, Uncooled infrared ray detector, Process variation of offset, Differentail delta sampling

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