In this work, nitrogen-rich carbon nanodots (CNDs) are prepared by the emulsion-templated carbonization of polyacrylamide. The formation mechanism and chemical structure are investigated by infrared, nuclear magnetic resonance, and X-ray photoelectron spectroscopies. Transmission electron microscopy also reveals that the obtained CNDs have well-developed graphitic structure and narrow size distribution without any size selection procedure. We vary the molecular weight of the polymer to control the size of the CNDs and finally obtain the CNDs rendering bright visible light under UV illumination with a high quantum yield of 40%. Given that the CNDs are worth utilizing in phosphor applications, we fabricate large-scale (20 × 20 cm) freestanding luminescent films of the CNDs based on a poly(methyl methacrylate) matrix. The polymer matrix can not only provide mechanical support but also disperse the CNDs to prevent solid-state quenching. For practical application, we demonstrate white LEDs consisting of the films as color-converting phosphors and InGaN blue LEDs as illuminators. Such white LEDs exhibit no temporal degradation in the emission spectrum under practical operation conditions. This study would suggest a promising way to exploit the luminescence from solid-state CNDs and offer strong potential for future CND-based solid-state lighting systems.

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While the demand for deep ultraviolet (DUV) light sources is rapidly growing, the efficiency of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their fundamentally limited light-extraction efficiency (LEE), calling for a novel LEE-enhancing approach to deliver a real breakthrough. Here, we propose sidewall emission-enhanced (SEE) DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active region and three-dimensional reflectors between the stripes. The SEE DUV LEDs show much enhanced light output power with a strongly upward-directed emission due to the exposed sidewall of the active region and Al-coated selective-area-grown n-type GaN micro-reflectors. The devices also show reduced operating voltage due to better n-type ohmic contact formed on the regrown n-GaN stripes when compared with conventional LEDs. Accordingly, the proposed approach simultaneously improves optical and electrical properties. In addition, strategies to further enhance the LEE up to the theoretical optimum value and control emission directionality are discussed.

We investigate the thermoelectric properties of a quantum dot coupled to ferromagnetic and superconducting electrodes. The combination of spin polarized tunneling at the ferromagnetic-quantum dot interface and the application of an external magnetic field that Zeeman splits the dot energy level leads to large values of the thermopower (Seebeck coefficient). Importantly, the thermopower can be tuned with an external gate voltage connected to the dot. We compute the figure of merit that measures the efficiency of thermoelectric conversion and find that it attains high values. We discuss the different contributions from Andreev reflection processes and quasiparticle tunneling into and out of the superconducting contact. Furthermore, we obtain dramatic variations of both the magnetothermopower and the spin Seebeck effect, which suggest that in our device spin currents can be controlled with temperature gradients only.