A memristor emulator which imitates the behavior of a TiO memristor is presented. Our emulator is built from off-theshelf solid state components. To develop real world memristor circuit applications, the emulator can be used for breadboard experiments in real time. Two or more memristor emulators can be connected in serial, in parallel, or in hybrid (serial and parallel combined) with identical or opposite polarities. With a simple change of connection, each memristor emulator can be switched between a decremental configuration or an incremental configuration. The hardware and spice simulation of the proposed emulator showed promising results that provides an alternative solution of TiO memristor model in real circuit.

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Recent advances in positioning and photogrammetry technologies have made it possible to build a mobile mapping system (MMS) that can obtain 3D coordinates of geographic objects from stereo images recorded from a moving vehicle. In this paper, we present a design and detailed implementation of an MMS called a 4S‐Van. Furthermore, we present four issues that have made major contributions to the performance of an MMS: 1) CCD camera calibration, 2) GPS signal condition, 3) integrating a GPS, inertial navigation system (INS), distance measurement indicator (DMI), and CCD cameras, and 4) the orientation angle of CCD cameras. In the experimental results, the performance of an MMS was analyzed for each component, giving an idea of how to effectively design and integrate each component in developing an MMS to get a maximal accuracy of 3D coordinates.

A radiation-hardened instrumentation amplifier (IA) that allows precise measurement in radiation environments, including nuclear power plants, space environments, and radiation therapy rooms, was designed and manufactured, and its characteristics were verified. Most electronic systems are currently designed using silicon-based complementary metal-oxide semiconductor (CMOS) integrated circuits (ICs) to achieve a highly integrated low-power design. However, fixed charges induced in silicon by ionization radiation cause various negative effects, resulting in, for example, the generation of leakage current in circuits, performance degradation, and malfunction. Given that such problems in radiation environments may directly lead to a loss of life or environmental contamination, it is critical to implement radiation-hardened CMOS IC technology. In this study, an IA used to amplify fine signals of the sensors was designed and fabricated in the 0.18 μm CMOS bulk process. The IA contained sub-circuits that ensured the stable voltage supply needed to implement system-on-chip (SoC) solutions. It was also equipped with special radiation-hardening technology by applying an I-gate n-MOSFET that blocks the radiation-induced leakage currents. Its ICs were verified to provide the intended performance following a total cumulative dose of up to 25 kGy(Si), ensuring its safety in radiation environments.