by high aspect ratio of T-shaped gate. Moreover, epitaxial Ultra-short-gate InAlAs/InGaAs high electron mobility engineering was simultaneously applied to make the reduction transistors (HEMTs) have been successfully fabricated with of Lg to be effective. nano-gate fabrication technology and epitaxial optimization. We Device structure and fabrication technology obtained an extrinsic maximum transconductance (GmmaX) of The epitaxial and gate structure of the InAlAs/1no75GaAs 1.65 S/mm and a current gain cutoff frequency (fT) of 610 GHz for 15-nm-gate HEMTs on GaAs substrates. Through a delay grown is d in Fig. 1. Thecular lay ere time analysis, the ultrahigh fT of this work is explained by an grown o aeGaAs sub strat y l ar beam nel of enhanced average electron velocity under the gate (Uave) of 4.3 x 7 CM/S, which was a result ofreduction of gate length (Lg and pseudomorphic HIEMT structure. The motivation was to epitaxial engineering. This report is the first experimental improve device characteristics such as current drive demonstration of 15 nm InAlAs/InGaAs metamorphic HEMTs capabilities, transconductance (Gm), and RF performance (MUEMTs) with an extremely high fTof610 GHz.through an enhancement of transport property at the channel [6]. The reduction of compressive strain was realized by

16 inch LCD in-cell remote touch screen with photo sensor in which the active structure is comprised of double metal-oxide semiconductor layers (GIZO/IZO) in its pixels has been developed. Double metal-oxide thin film transistor (TFT) for both switch and sensor elements shows high photo current as I light /I dark >10 6 , a mobility of >10cm 2 /Vs and high stability under LCD operation condition. In this paper, the possibility of a novel application of an optical touch screen which is entirely based on the metal oxide TFT is proposed.

A high-speed and low-power delayed flip-flop circuit with non-return-to-zero mode output using a new negative differential resistance logic element is proposed and fabricated using resonant tunneling diode (RTD)/high electron mobility transistor (HEMT) integration technology on an InP substrate. The number of devices used in the delayed flip-flop and the power dissipation has been significantly reduced by using the proposed scheme. The operation of the fabricated delayed flip-flop is demonstrated up to 26 Gb/s with a very low power dissipation of about 2.8 mW at a power supply voltage of 0.9 V.

Resonant tunneling diodes (RTDs) exhibit a negative-differential-resistance (NDR) characteristic and a picosecond-level switching time (1.5 ps). The NDR characteristic provides the possibility of reducing circuit complexity and power consumption. The RTD's very fast switching characteristic provides the possibility of high-speed operation. Utilizing the RTD's characteristics, we designed and fabricated high-speed implementations of a static inverter, a three-stage ring oscillator, and basic Boolean logic gates. Using these results, we designed a 2-bit analog-to-digital converter (ADC) with reduced circuit complexity. Spice simulation proved that the designed ADC can operate at a sampling frequency of up to 10 GHz.

InAlAs/InGaAs high electron mobility transistors (HEMTs) have been a great contribution to the research and development of high-speed integrated circuits, owing to their high electron mobilities, high saturation velocities, and high sheet electron densities. In integrated circuits using a HEMT as active device, the gate recess process has considerable influence on the yield and uniformity. The wet recess of a 0.1 mm gate footprint has difficulty achieving a high yield greater than 98% due to a nonuniform reaction between the etchant and the semiconductor. A uniform initial reaction between the InGaAs cap layer and the wet etchant mainly determines the yield and uniformity. In this paper, we present an ultrasonically assisted recess method of promoting a uniform initial reaction in the recess process. This method enables us to achieve a high yield and a high uniformity in integrated circuits.