610 GHz InAlAs/In&lt;inf&gt;0.75&lt;/inf&gt;GaAs Metamorphic HEMTs with an Ultra-Short 15-nm-Gate

Yeon, Seong-Jin; Park, Myonghwan; Choi, Jeongmin; Seo, Kwang-Seok

doi:10.1109/iedm.2007.4419014

Cited by 34 publications

(20 citation statements)

References 8 publications

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“…Fig. 3 shows f avg (f avg ¼ (f T × f max ) 0.5 ) against L g for the InAs PHEMTs in this Letter, as well as reported InGaAs HEMTs [1][2][3][4][7][8][9][10]. The devices in this Letter exhibit the record values of f avg ever reported in any FET at L g ¼ 100 nm and ¼ 200 nm.…”

supporting

confidence: 52%

L _g =100 nm InAs PHEMTs on InP substrate with record high frequency response

Kim

Chen

Kim³

et al. 2012

Electron. Lett.

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A report is presented on 100 nm and 200 nm InAs PHEMTs on an InP substrate with a record f T performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100 nm InAs PHEMT exhibits excellent performance, such as g m,max ¼ 2 S/mm, f T ¼ 421 GHz and f max ¼ 620 GHz at V DS ¼ 0.7 V. The device also shows a well-balanced f T and f max in excess of 400 GHz, even at V DS ¼ 0.5 V. In addition, the device gains about 70 % improvement in f T as L g shrinks down from 200 to 100 nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz f T from III-V HEMTs in the future.Introduction: Over the past three decades, gate length (L g ) scaling has been the key technology driver in III-V HEMTs with the InGaAs/ InAlAs material system to demonstrate record high frequency performance, as assessed by current-gain cutoff frequency (f T ) and maximum oscillation frequency (f max ). Recent reports on record high frequency characteristics of InGaAs/InAlAs HEMTs have been published with L g ¼ 30 -40 nm [1-3]. These improvements in RF performance have also arisen partly from the use of an indium-rich InAs sub-channel that increases the average electron velocity under the gate and improves charge control behaviour in the channel.Despite the record values that have been obtained for sub-100 nm InP HEMTs, clearly there exists scope for further improvement. In fact, the literature on record values of f T in III-V HEMTs reveals that only a 57 % improvement in f T is obtained by reducing L g from 130 nm [4] to 30 nm [1], indicating that the device suffers from an increased influence of parasitic delay terms and poor short-channel effects [5]. Without any doubt, the full benefit of L g scaling requires the minimisation of the delay associated with parasitic resistances and extrinsic gate capacitances, as L g scales down deeply. In particular, the parasitic delay due to the extrinsic fringing gate capacitance (C g,ext ) plays a more important role as L g shrinks, because the intrinsic gate capacitance (C gi ) scales down linearly with L g . In this Letter, we report that a systematic reduction of the parasitic delay associated with the extrinsic gate capacitance leads to an excellent high frequency performance in InAs PHEMTs on an InP substrate. In particular, our device exhibits a record f T ¼ 421 GHz at L g ¼ 100 nm and f T ¼ 250 GHz at L g ¼ 200 nm.

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supporting

confidence: 52%

L _g =100 nm InAs PHEMTs on InP substrate with record high frequency response

Kim

Chen

Kim³

et al. 2012

Electron. Lett.

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“…These suggest that the difference in v e in this range does not affect very much on f T . Significant improvements in f T are reported after 2000 to date [20,21,22,23,24,25,26]. The f T versus L g of these outstanding results are superimposed in Fig.…”

Section: High-frequency Characteristicsmentioning

confidence: 90%

InP and GaN high electron mobility transistors for millimeter-wave applications

Suemitsu

2015

IEICE Electron. Express

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This paper reviews two important candidates of millimeter-and sub-millimeter-wave applications, InP-and GaN-based high electron mobility transistors (HEMTs). For both devices, the gate length scaling has already well developed to the dimension of 15-30 nm. For further improvement in the cutoff frequency, an importance of the careful managements of parasitic components in the devices is discussed. Successful reduction of the parasitic gate delay time will enable us to achieve a cutoff frequency of over 1 THz in InP-based HEMTs and that of over 500 GHz in GaN-based HEMTs.

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“…Reduction of parasitic capacitance in the gate region by adopting a cavity structure improves the high-frequency and noise characteristics of InAlAs/InGaAs high-electron mobility transistors [229]. InP based HEMTs have a current gain cut off frequency in excess of 600 GHz, making them the fastest transistors in the world [230][231][232]. Since these devices exhibit an ultra low noise figure of less than 2 dB at 100 GHz, they are superior in performance compared to GaAs HEMTs, GaAs MESFETs and sub-100 nm silicon MOS devices [233].…”

Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%