Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K.

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In order to ensure long lifetime and stable light output of LEDs the thermal performance parameters need to be designed in the LED chip package and module level, which include such items as heat sink structure and materials, interface materials and substrates. In this work we used aluminium nitride(AlN) as submount of LED chips and made chip on board(COB) type LED module. The effect of different silver(Ag) epoxy bonding materials and bonding methods on the performance of LED module were examined. The effect of addition of red quantum dot(QD) on the performance of white LED was also studied.