The decomposition of tetraisopropyl orthotitanate (TTIP), a representative precursor used in the atomic layer deposition (ALD) of titanium dioxide (TiO2) film, and the resulting changes in the thin film properties of the TiO2 film were investigated. TTIP was evaluated after exposure to thermal stress in an enclosed container. The vapor pressure results provide reasonable evidence that impurities are generated by the decomposition of TTIP under thermal stress. These impurities led to changes in the thermal properties of TTIP and changes in the growth rate, morphology, and composition of the thin film; in particular, these impurities increased the unstable oxidation states of Ti2+ (TiO) content in the TiO2 film. The changes in the properties of the TiO2 film resulting from the changes in the physical properties of TTIP led to a change in the properties of the device. We proved that the thermal stability of the precursor is a factor that can determine the reliability of the ALD process and the resulting thin film. Additionally, systematic evaluation of the precursor can provide useful information that can improve the development of the precursor and the consistency of the process.

No abstract

A Y2O3 coating was prepared using the atmospheric plasma spraying (APS) technique. On exposing the coating to CF4/O2/Ar plasma, a fluorine contamination layer (YOxFy) was formed, which was the main cause of process drift and contamination particle generation on the APS–Y2O3 coating surface. To remove the YOxFy layer on the coating surface, a piranha solution, which is a mixture of sulfuric acid and hydrogen peroxide, was employed for cleaning. The piranha solution was found to be an excellent medium for removing the YOxFy layer. The amount of contamination particle generated could be reduced by approximately 37% after cleaning with a 3:1 piranha solution compared with before cleaning.

No abstract