Topologically stabilized spin configurations like helices in the form of planar domain walls (DWs) or vortex-like structures with magnetic functionalities are more often a theoretical prediction rather than experimental realization. In this paper we report on the exchange coupling and helical phase characteristics within Dy-Fe multilayers. The magnetic hysteresis loops with temperature show an exchange bias field of around 1.0 kOe at 10 K. Polarized neutron reflectivity reveal (i) ferrimagnetic alignment of the layers at low fields forming twisted magnetic helices and a more complicated but stable continuous helical arrangement at higher fields (ii) direct evidence of helices in the form of planar 2π-DWs within both layers of Fe and Dy. The helices within the Fe layers are topologically stabilized by the reasonably strong induced in-plane magnetocrystalline anisotropy of Dy and the exchange coupling at the Fe-Dy interfaces. The helices in Dy are plausibly reminiscent of the helical ordering at higher temperatures induced by the field history and interfacial strain. Stability of the helical order even at large fields have resulted in an effective modulation of the periodicity of the spin-density like waves and subsequent increase in storage energy. This opens broad perspectives for future scientific and technological applications in increasing the energy density for systems in the field of all-spin-based engineering which has the potential for energy-storing elements on nanometer length scales.

Nanowires (NWs) hold great potential in advanced thermoelectrics due to their reduced dimensions and low‐dimensional electronic character. However, unfavorable links between electrical and thermal conductivity in state‐of‐the‐art unpassivated NWs have, so far, prevented the full exploitation of their distinct advantages. A promising model system for a surface‐passivated one‐dimensional (1D)‐quantum confined NW thermoelectric is developed that enables simultaneously the observation of enhanced thermopower via quantum oscillations in the thermoelectric transport and a strong reduction in thermal conductivity induced by the core–shell heterostructure. High‐mobility modulation‐doped GaAs/AlGaAs core–shell NWs with thin (sub‐40 nm) GaAs NW core channel are employed, where the electrical and thermoelectric transport is characterized on the same exact 1D‐channel. 1D‐sub‐band transport at low temperature is verified by a discrete stepwise increase in the conductance, which coincided with strong oscillations in the corresponding Seebeck voltage that decay with increasing sub‐band number. Peak Seebeck coefficients as high as ≈65–85 µV K−1 are observed for the lowest sub‐bands, resulting in equivalent thermopower of S2σ ≈ 60 µW m−1 K−2 and S2G ≈ 0.06 pW K−2 within a single sub‐band. Remarkably, these core–shell NW heterostructures also exhibit thermal conductivities as low as ≈3 W m−1 K−1, about one order of magnitude lower than state‐of‐the‐art unpassivated GaAs NWs.

Low-bandgap semiconductor nanowires (NWs) attract considerable interest for mid-infrared (MIR) photonics and optoelectronics, where ideal candidate materials require surface-passivated core–shell systems with large tunability in band offset, lineup, and emission wavelength while maintaining close lattice-matching conditions. Here, we propose and demonstrate epitaxial InAs–AlAsSb core–shell NW arrays on silicon (Si) that offer exceptional control over both the internal strain close to lattice-matching as well as band lineups tunable between type-I and type-II, with almost no analogue in the III–V materials family. We develop direct monolithic growth of high-uniformity InAs–AlAsSb NWs with wide tunability in shell composition and employ correlated Raman scattering and micro-photoluminescence spectroscopy to elaborate the interplay among hydrostatic strain, band lineup, and emission energy of the NW core luminescence tuned from ∼0.4 to 0.55 eV. Electronic structure calculations further support the experimentally observed tunability between type-I and type-II band lineups. The Si-integrated InAs-AlAsSb NW materials system holds large prospects not only for on-chip MIR photonics but also for other applications including high-speed transistors and NW-based hot carrier solar cells.