The structure of the [001]-oriented single crystalline tungsten probes sharpened in ultra-high vacuum using electron beam heating and ion sputtering has been studied using scanning and transmission electron microscopy. The electron microscopy data prove reproducible fabrication of the single-apex tips with nanoscale pyramids grained by the {011} planes at the apexes. These sharp, [001]-oriented tungsten tips have been successfully utilized in high resolution scanning tunneling microscopy imaging of HOPG(0001), SiC(001) and graphene/SiC(001) surfaces. The electron microscopy characterization performed before and after the high resolution STM experiments provides direct correlation between the tip structure and picoscale spatial resolution achieved in the experiments.

Because of their unique atomic structure, 2D materials are able to create an up-to-date paradigm in fundamental science and technology on the way to engineering the band structure and electronic properties of materials on the nanoscale. One of the simplest methods along this path is the superposition of several 2D nanomaterials while simultaneously specifying the twist angle between adjacent layers (θ), which leads to the emergence of Moirésuperlattices. The key challenge in 2D nanoelectronics is to obtain a nanomaterial with numerous Moirésuperlattices in addition to a high carrier mobility in a stable and easy-to-fabricate material. Here, we demonstrate the possibility of synthesizing twisted multilayer graphene (tMLG) with a number of monolayers N L = 40−250 and predefined narrow ranges of θ = 3−8°, θ = 11−15°, and θ = 26−30°. A 2D nature of the electron transport is observed in the tMLG, and its carrier mobilities are close to those of twisted bilayer graphene (tBLG) (with θ = 30°) between h-BN layers. We demonstrate an undoubtful presence of numerous Moirésuperlattices simultaneously throughout the entire tMLG thickness, while the periods of these superlattices are rather close to each other. This offers a challenge of producing a next generation of devices for nanoelectronics, twistronics, and neuromorphic computing for large data applications.

No abstract

No abstract

No abstract