The formation of secondary energetic electrons induced by an abnormal electron-heating mode in pulsed microwave-frequency atmospheric microplasmas was investigated using particle-in-cell simulation. We found that additional high electron heating only occurs during the first period of the ignition phase after the start of a second pulse at sub-millimeter dimensions. During this period, the electrons are unable to follow the abruptly retreating sheath through diffusion alone. Thus, a selfconsistent electric field is induced to drive the electrons toward the electrode. These behaviors result in an abnormal electron-heating mode that produces high-energy electrons at the electrode with energies greater than 50 eV. V C 2014 AIP Publishing LLC. [http://dx.

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In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using SF 6 with O 2 and C 4 F 8 plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of O 2 gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With O 2 gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

In this study, two electrodes between a flexible printed circuit board (FPCB) and a rigid PCB (RPCB) are bonded using longitudinal ultrasonic vibration. The surface finish of the electrode of the RPCB is fixed as an electroless Ni/immersion Au (ENIG), whereas two different surface finishes are employed for the FPCB: immersion Sn and ENIG. Electrodes of the RPCB and FPCB are successfully bonded using longitudinal ultrasonic vibration. While a continuous intermetallic compound (IMC) of (CuxAu1-x)6Sn5 is formed at the ENIG/Sn interface, a Au–Ni–P reaction layer is formed with an un-bonded region at the ENIG/ENIG interface. The peel strength of the ENIG/Sn joint is higher than that of the ENIG/ENIG joint. Results of peel tests show that the bonding conditions have a significant effect on joint integrity.

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