We studied the growth mechanism of Al-doped ZnO (AZO) films using seed layers for enhancing the performance of transparent conducting oxides (TCOs) in the thin film solar cells. We carried out two-step processes for the deposition of AZO films. Seed layers were deposited on glass substrate as a function of Ar/O 2 gas flow ratio. We show the results of our investigation on the micro-structural properties of AZO seed layers using transmission electron microscopy (TEM). The elemental composition and electronic structure changes with the deposition conditions were examined using energy dispersive X-ray (EDX) and reflective electron energy loss spectroscopy (REELS). The optical and electrical characteristics of AZO film using the seed layer with Ar/O 2 = 9/1 show a high haze value of 88% at 500 nm and a resistivity value of 3.7 × 10 -4Ω·cm.

Reconstruction and exaggerated grain growth (EGG) behaviors of redeposited MgO layer were observed and analyzed theoretically with the addition of dopant and MgO seed particle. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer and this is believed to be caused by the formation of charged clusters in the plasma spaces during discharge in AC-PDPs.

The reconstruction characteristics of MgO (111) textured protective layer and the influences of silicon and MgO seed particle in AC‐PDP were investigated by over‐frequency accelerated discharge and these were correlated to the variations of electronic structures. The reconstruction and exaggerated grain growth (EGG) were closely correlated with the partial pressure of evaporated MgO in plasma space and explained by defect‐assisted 2‐D and/or 3‐D nucleation and growth of charged clusters during discharge under electric field in AC‐PDP.