Absolute photoluminescence measurements present a tool to predict the quality of photovolatic absorber materials before finishing the solar cells. Quasi-Fermi level splitting predicts the maximal open circuit voltage. However, various...
Chemically processed methylammonium tin-triiodide (CH3NH3SnI3) films include Sn in different
oxidation
states, leading to poor stability and low power conversion efficiency
of the resulting solar cells (PSCs). The development of absorbers
with Sn [2+] only has been identified as one of the critical steps
to develop all Sn-based devices. Here, we report on coevaporation
of CH3NH3I and SnI2 to obtain absorbers
with Sn being only in the preferred oxidation state [+2] as confirmed
by X-ray photoelectron spectroscopy. The Sn [4+]-free absorbers exhibit
smooth highly crystalline surfaces and photoluminescence measurements
corroborating their excellent optoelectronic properties. The films
show very good stability under heat and light. Photoluminescence quantum
yields up to 4 × 10–3 translate in a quasi
Fermi-level splittings exceeding 850 meV under one sun equivalent
conditions showing high promise in developing lead-free, high efficiency,
and stable PSCs.
Alkali metal doping and grain boundaries (GB) have been at the center of attention within the Cu(In,Ga)(S,Se)2 photovoltaics community for years. This study provides the first experimental evidence that the GB of sodium‐doped CuInSe2 thin films may undertake reversible oxidation even at room temperature, whereas undoped films may not. The findings are corroborated by cathodoluminescence imaging, secondary ion mass spectrometry, and Kelvin probe force microscopy on air‐exposed films subsequently subject to vacuum. A thermochemical assessment identifies the likely solid–gas equilibria involved. These reactions open new research questions with respect to the beneficial role played by alkali metal dopants in chalcopyrite solar cells and may steer the community toward new breakthroughs.
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