This work studies the effects of annealing temperature ranging from 100-500 ºC towards its physical and optical properties. FESEM images showed that the structural properties of tetrapod nanostructured ZnO thin film were affected by the annealing temperature. The thickness of thin film is strongly support the FESEM analysis. The optical band gap energy (E g ) was evaluated at 2.78 -3.06 eV, which the ZnO thin film was found to be influenced by the change of interatomic spacing of semiconductor. The result shows that the higher annealing temperature greatly affects the physical structure of tetrapod nanostructured ZnO thin film to become narrow and longer length.

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. Then the synthesized samples were characterized by current-voltage (I-V) measurement and FESEM. The Sn doping concentration were varied at 0.2 at.%, 0.4 at.%, 0.6 at.%, 0.8 at.% and 1.0 at.%. The result suggests that the optimum value for Sn doping concentration was 0.8 at.% which exhibited the highest conductive sample with value of 3.00 ×10-6 S/cm.

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 0.5 at.%, 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. The synthesized samples were characterized by current-voltage (I-V) measurement and UV-VISS spectrometer.

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. The synthesized samples were characterized by current-voltage (I-V) measurement and Field Emission Scanning Electron Microscopy (FESEM). The Sn doping concentration were varied at 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. FESEM images show that as the Sn concentration increased, the nanoparticles size of Sn-doped ZnO become denser and less grain boundary which might help in improvement of the electrical properties.

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).