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Base transit time, τ b , in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported. Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, µ n , in the neutral base region and the effective electron velocity, S c , at the edge of base-collector heterojunction. µ n and S c are temperature-dependent parameters. A unity gain cut-off frequency of 10.6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19

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