Impact ionization in InAlAs/InGaAs/InAlAs HEMT's

Webster, R.T.; Wu, Shangli; Anwar, A.F.M.

doi:10.1109/55.841293

Cited by 61 publications

(24 citation statements)

References 6 publications

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“…However, low field impact ionization in In Ga As that has been modeled [1] and demonstrated experimentally [2]- [4] due to the weak field dependence of the electron ionization coefficient at electric fields as low as 155 kV cm , is a cause of concern since it has detrimental effect on the excess noise performance of APDs [5]- [7]. Impact ionization in In Ga As also causes hole feedback in InP-based n-p-n heterojunction bipolar transistors (HBTs) with In Ga As collectors [8], thereby leading to early device breakdown while in high electron mobility transistors, it can give rise to current instability, hysteresis, high gate current, and kink effect due to trapping of holes [9].…”

Section: Introductionmentioning

confidence: 99%

Excess noise measurement in In/sub 0.53/Ga/sub 0.47/As

Goh

Tan

et al. 2005

IEEE Photon. Technol. Lett.

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Abstract-The excess noise due to impact ionization has been measured explicitly for the first time in In 0 53 Ga 0 47 As. By using a phase sensitive detection technique, the noise due to avalanche current was determined even in the presence of high tunneling currents. The excess noise due to pure electron injection measured on a series of thick In 0 53 Ga 0 47 As p + -i-n + diodes suggests large electron to hole ionization coefficient ratio between 3.7 at electric field of 310 kV cm 1 to 5.3 at 260 kV cm 1 . Excess noise was also measured at fields as low as 155 kV cm 1 suggesting that significant impact ionization occurs at these low fields. The multiplication and excess noise calculated using published ionization coefficients and ignoring dead space effects, gave good agreement with the experimental data for mixed and pure electron injection.Index Terms-Avalanche photodiodes, excess noise factor, impact ionization, In 0 53 Ga 0 47 As, ionization coefficients, multiplication.

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Section: Introductionmentioning

confidence: 99%

Excess noise measurement in In/sub 0.53/Ga/sub 0.47/As

Goh

Tan

et al. 2005

IEEE Photon. Technol. Lett.

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“…Comparing the observed leakage current levels with those reported for conventional InGaAs/InAlAs pHEMTs [4], the new devices exhibit much lower values. Particularly for samples XMBE#109 and VMBE#1832, minimal contribution to the on-state leakage due to tunnelling is observed.…”

Section: Characteristicsmentioning

confidence: 54%

Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

Bouloukou

Boudjelida

Sobih

et al. 2008

2008 International Conference on Advanced Semiconductor Devices and Microsystems

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“…The gate current due to impact ionization by subtracting the Schottky current was observed which was a function of both V GS and V DS voltages. The extracted impact ionization current can be correlated with the experimental drain current once the ionization constant and the hole transmission probability are known [24]. Such a rise in gate leakage current is presumably due to hole collection as impact ionization becomes significant in the device.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%