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Self-aligned double patterning (SADP) is one of the most promising techniques for sub-20nm technology. Spacer-is-dielectric SADP using a cut process is getting popular because of its higher design flexibility; for example, it can decompose odd cycles without the need of inserting any stitch. This paper presents the first work that applies the cut process for decomposing odd cycles during routing. For SADP, further, overlay control is a critical issue for yield improvement; while published routers can handle only partial overlay scenarios, our work identifies all the scenarios that induce overlays and proposes a novel constraint graph to model all overlays. With the developed techniques, our router can achieve high-quality routing results with significantly fewer overlays (and thus better yields). Compared with three state-of-the-art studies, our algorithm can achieve the best quality and efficiency, with zero cut conflicts, smallest overlay length, highest routability, and fastest running time.

Spare cells are often used in engineering change order (ECO) timing optimization. By applying spare-cell rewiring techniques, timing-violated paths in a design can be fixed. In addition, mask re-spin cost economization has become a critical challenge for modern IC design, and it can be achieved by reducing the number of layers used to rewire spare cells. This paper presents the first work for the problem of ECO timing optimization considering redundant wires (unused wires or dummy metals) to minimize the number of rewiring layers. We first propose a multi-commodity flow model for the sparecell selection problem and apply integer linear programming (ILP) to simultaneously optimize all timing-violated paths. The ILP formulation minimizes the number of used spare cells and considers the routability of the selected spare cells. Then, we develop a tile-based ECO router which minimizes the number of rewiring layers by reusing redundant wires. Experimental results based on five industry benchmarks show that our algorithm not only effectively resolves timing violations but also reduces the number of rewiring layers under reasonable runtime.

Extreme Ultraviolet Lithography (EUVL) is one of the most promising Next Generation Lithography (NGL) technologies. Due to the surface roughness of the optical system used in EUVL, the rather high level of flare (i.e., scattered light) becomes one of the most critical issues in EUVL. In addition, the layout density nonuniformity and the flare periphery effect (the flare distribution at the periphery is much different from that in the center of a chip) also induce a large flare variation within a layout. Both of the high flare level and the large flare variation could worsen the control of critical dimension (CD) uniformity. Dummification (i.e., tiling or dummy fill) is one of the flare compensation strategies to reduce the flare level and the flare variation for the process with a clear-field mask in EUVL. However, existing dummy fill algorithms for Chemical-Mechanical Polishing (CMP) are not adequate for the flare mitigation problem in EUVL due to the flare periphery effect. This paper presents the first work that solves the flare mitigation problem in EUVL with a specific dummification algorithm flow considering global flare distribution. The dummification process is guided by dummy demand maps, which are generated by using a quasi-inverse lithography technique. In addition, an error-controlled fast flare map computation technique is proposed and integrated into our algorithm to further improve the efficiency without loss of computation accuracy. Experimental results show that our flow can effectively and efficiently reduce the flare level and the flare variation, which may contribute to the better control of CD uniformity.

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