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N e w computer algorithm has been deveIoped to select the optimal location of source substation in redial distribution networks. Selection methodology has been developed based on the geo-graphical location of connected substation of source substation, .user's defined obstacle area by determining minimal route of the networks based on minimal loss of the networks and economic consideration. For the best location selection of source substation two steps selection method has been implemented for minimizing computer computation time. In the first steps it determines the projected area for the selection of optimal location of source substation. In the seconds step precise calculation is involved. Depending on the precise calculation of area selection Computation time will be varied. Simulated example ha5 been introduced for detail explanation of the output of computer algorithms.

In this publication, signal integrity issues of Power Distribution Networks (PDNs) are addressed (to insure acceptable quality of signals within); Transmission line effects, Crosstalk, and Impedance mismatch. Power Integrity issues of PDNs are also addressed (to insure acceptable quality of power delivery within); Voltage drop, High impedance, Parasitic Via inductances, and Noise coupling. In this work, ANSYS™ HFSS 2013 FEM simulation techniques development, adaptive meshing, and convergence to S-parameters, Differential S-parameters, and Z-parameters to design and simulate PDNs under different conditions and the results are compared to measurements performed in our laboratories.

The paper addresses the challenges in electronic packaging for extreme environment based on experimental work of the researchers and conducted reliability testing to evaluate high speed devices suitable for these applications, substrates, die attach, wire bonding, and encapsulation and housing. In particular, the researcher's work has focused on SiC power devices with low loss high voltage Schottky diodes with significant applications, high temperature JFETs and SiC MOSFETs (double trench), and GaN microwave devices. The paper provides recommendations for selection of devices, substrates, die attach, and encapsulation and housing for these applications.