The semiconductor-electrolyte interface dominates the behaviors of semiconductor electrocatalysis, which has been modeled as a Schottky-analog junction according to the classic electron transfer theories. However, this model cannot be used to explain the extremely high carrier accumulations in ultrathin semiconductor catalysis observed in our work. Inspired by the recently developed ion-controlled electronics, we revisited the semiconductor-electrolyte interface and unraveled a universal self-gating phenomenon through micro-cell based in-situ electronic/electrochemical measurements to clarify the electronic-conduction modulation of semiconductors during electrocatalytic reaction. Then we demonstrate that the type of semiconductor catalysts strongly correlates their electrocatalysis, i.e., n-type semiconductor catalysts favor cathodic reactions such as hydrogen evolution reaction (HER), p-type ones prefer anodic reactions such as oxygen evolution reaction (OER), and bipolar ones tend to perform both anodic and cathodic reactions.Our study provides a new insight into the electronic origin of semiconductor-electrolyte interface during electrocatalysis, paving the way for designing high-performance semiconductor catalysts.
Rational design of noble metal catalysts with the potential to leverage efficiency is vital for industrial applications. Such an ultimate atom-utilization efficiency can be achieved when all noble metal atoms exclusively contribute to catalysis. Here, we demonstrate the fabrication of wafer-size amorphous PtSex film on SiO2 substate via a low-temperature amorphizing strategy, which offers single-atom-layer Pt catalysts with high atom-utilization efficiency (~26 wt%). This amorphous PtSex (1.2
A carbon microtube
aerogel (CMA) with hydrophobicity,
strong adsorption capacity, and superb recyclability was obtained
by a feasible approach with economical raw material, such as kapok
fiber. The CMA possesses a great adsorption capacity of 78–348
times its weight. Attributed to its outstanding thermal stability
and excellent mechanical properties, the CMA can be used for many
cycles of distillation, squeezing, and combustion without degradation,
which suggests a potential practical application in oil–water
separation. In addition, the adsorption capacity still retained 98%
by distillation, 97% by squeezing, and 90% by combustion after 10
cycles. Therefore, the obtained CMA has a broad prospect as an economical,
efficient, and environmentally friendly adsorbent.
Lateral heterostructures of two-dimensional transition metal dichalcogenides (TMDs) have offered great opportunities in the engineering of monolayer electronics, catalysis and optoelectronics. To explore the full potential of these materials, developing methods to precisely control the spatial scale of the heterostructure region is crucial. Here, we report the synthesis of ultra-long MoS 2 nano-channels with several micrometer length and 2-30 nanometer width within the MoSe 2 monolayers, based on intrinsic grain boundaries (GBs). Firstprinciples calculations disclose that the strain fields near the GBs not only lead to the preferred substitution of selenium by sulfur but also drive coherent extension of the MoS 2 channel from the GBs. Such a strain-driven synthesis mechanism is further shown applicable to other topological defects. We also demonstrate that the spontaneous strain of MoS 2 nanochannels can further improve the hydrogen production activity of GBs, paving the way for designing GB based high-efficient TMDs in the catalytic application.
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