To improve performance and reliability of integrated circuits, accurate knowledge of thermal transport properties must be possessed. In particular, reduced dimensions increase boundary scattering and the significance of thermal contact resistance. A thermoreflectance measurement can be used with a valid heat transport model to experimentally quantify the contact thermal resistance of thin film interconnects. In the current work, a quasi-steady state thermoreflectance measurement is used to determine the temperature distribution of a thin film gold interconnect (100 nm) undergoing Joule heating. By comparing the data to a heat transport model accounting for thermal diffusion, dissipation, and Joule heating, a measure of the thermal dissipation or overall thermal resistance of unit area is obtained. The gold film to substrate overall thermal resistance of unit area beneath the wide lead (10 μm) and narrow line (1 μm) of the interconnect are 1.64 × 10−6 m2 K/W and 5.94 × 10−6 m2 K/W, respectively. The thermal resistance of unit area measurements is comparable with published results based on a pump-probe thermoreflectance measurement.

Thermoreflectance imaging provides the capability to map temperature spatially on the submicrometer scale by using a light source and CCD camera for data acquisition. The ability to achieve such spatial resolution and observe detailed features is influenced by optical diffraction. By combining diffraction from both the sample and substrate, a model is developed to determine the intensity of the thermoreflectance signal. This model takes into account the effective optical distance, sample width, wavelength, signal phase shift, and reflectance intensity, while showing qualitative and quantitative agreement with experimental thermoreflectance images from 1 and 10 μm wide gold lines at two wavelengths.