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The band structure of PbTe can be manipulated by alloying with MgTe to control the band degeneracy. This is used to stabilize the optimal carrier concentration, making it less temperature dependent, demonstrating a new strategy to improve overall thermoelectric efficiency over a broad temperature range.

A high temperature Seebeck coefficient measurement apparatus with various features to minimize typical sources of error is designed and built. Common sources of temperature and voltage measurement error are described and principles to overcome these are proposed. With these guiding principles, a high temperature Seebeck measurement apparatus with a uniaxial 4-point contact geometry is designed to operate from room temperature to over 1200 K. This instrument design is simple to operate, and suitable for bulk samples with a broad range of physical types and shapes.

Vanadium oxides have for many decades attracted much attention for their rich and unique physical properties which pose intriguing questions as to their fundamental origins as well as offering numerous potential applications for microelectronics, sensors, and microelectromechanical systems (MEMS). This paper reviews the unique structure and properties of the two most common vanadium oxides which have entered into microfabricated devices, VO 2 and V 2 O 5 , and some of the past and future device applications which can be realized using these materials. Two emerging new materials, sodium vanadium bronzes and vanadium oxide nanotubes are also discussed for their potential use in new microelectronic devices.