An X-ray exposure system has been built aiming at 1 µm pattern replication, which will operated automatically. On the basis of X-ray attenuation analysis, Si–K radiation was chosen. A high power (more than 20 kW input) X-ray source has been equipped with a water cooled rotary target. For alignment, precise mask-wafer displacement detection by vibration method and precise three dimensional aligning mechanism have been adopted. Detection resolution less than ±0.1 µm and mechanism step resolution less than 0.01 µm have been obtained. Light transparent X-ray mask consisting of Si3N4 film has been developed and in use. Dry etching temperature has been lowered to 50°C, which permits the use of heat feeble, highly sensitive resists. The system has been adopted to the fabrication of various devices such as 1 µm magnetic bubble devices, MOS ring oscillator and so on.

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