With the rapid development of artificial intelligence, the simulation of the human brain for neuromorphic computing has demonstrated unprecedented progress. Photonic artificial synapses are strongly desirable owing to their higher neuron selectivity, lower crosstalk, wavelength multiplexing capabilities, and low operating power compared to their electric counterparts. This study demonstrates a highly transparent and flexible artificial synapse with a two‐terminal architecture that emulates photonic synaptic functionalities. This optically triggered artificial synapse exhibits clear synaptic characteristics such as paired‐pulse facilitation, short/long‐term memory, and synaptic behavior analogous to that of the iris in the human eye. Ultraviolet light illumination‐induced neuromorphic characteristics exhibited by the synapse are attributed to carrier trapping and detrapping in the SnO2 nanoparticles and CsPbCl3 perovskite interface. Moreover, the ability to detect deep red light without changes in synaptic behavior indicates the potential for dual‐mode operation. This study establishes a novel two‐terminal architecture for highly transparent and flexible photonic artificial synapse that can help facilitate higher integration density of transparent 3D stacking memristors, and make it possible to approach optical learning, memory, computing, and visual recognition.
Dinuclear Pt(III) complexes were commonly reported to have short-lived lowest-lying triplet states, resulting in extremely weak or no photoluminescence. To overcome this obstacle, a new series of dinuclear Pt(III) complexes, named Pt2a-Pt2c, were strategically designed and synthesized using donor (D)–acceptor (A)-type oxadiazole-thiol chelates as bridging ligands. These dinuclear Pt(III) complexes possess a d7–d7 electronic configuration and exhibit intense phosphorescence under ambient conditions. Among them, Pt2a exhibits orange phosphorescence maximized at 618 nm in degassed dichloromethane solution (Φp ≈ 8.2%, τp ≈ 0.10 μs) and near-infrared (NIR) emission at 749 nm (Φp ≈ 10.1% τp ≈ 0.66 μs) in the crystalline powder and at 704 nm (Φp ≈ 33.1%, τp ≈ 0.34 μs) in the spin-coated neat film. An emission blue-shifted by more than 3343 cm–1 is observed under mechanically ground crystalline Pt2a, affirming intermolecular interactions in the solid states. Time-dependent density functional theory (TD-DFT) discloses the lowest-lying electronic transition of Pt2a-Pt2c complexes to be a bridging ligand–metal–metal charge transfer (LMMCT) transition. The long-lived triplet states of these dinuclear platinum(III) complexes may find potential use in lighting. Employing Pt2a as an emitter, high-performance organic light-emitting diodes (OLEDs) were fabricated with NIR emission at 716 nm (η = 5.1%), red emission at 614 nm (η = 8.7%), and white-light emission (η = 11.6%) in nondoped, doped (in mCP), and hybrid (in CzACSF) devices, respectively.
Graphene−semiconducting light absorber hybrid photodetectors have attracted increasing attention because of their ultrahigh photoconductive gain and superior sensitivity. However, most graphene-based hybrid photodetectors reported previously have shown a relatively long response time (on the order of seconds) caused by numerous long-lived traps in these hybrid systems, which greatly restricts device speed. In this work, graphene−thieno [3,4b]thiophene/benzodithiophene polymer hybrid photodetectors fabricated on self-assembled-monolayer (SAM)-functionalized SiO 2 substrates are demonstrated with a maximum responsivity of ∼1.8 × 10 5 A W −1 and a relatively short photocurrent response time of ∼7.8 ms. The fast and highly sensitive device characteristics provide great potential in low-light imaging applications. The hybrid photodetector on the SAM-coated SiO 2 substrate shows better performance in responsivities and response times as compared with those of the device on the bare SiO 2 substrate. The improved responsivities are attributed to a significant increase in carrier mobility in graphene channels by introducing SAM-modified substrates. In addition, SAM functionalization is capable of effectively removing multiple surface traps and charged impurities between graphene sheets and SiO 2 substrates, which prevents the long-lived trapping of photocarriers at graphene/SiO 2 interfaces and remarkably decreases device response time.
PtPd nanocrystals (NCs) with various alloying compositions are strategically prepared through the chemical method and exploited as counter electrodes (CEs) in dyesensitized solar cells (DSSCs). The photovoltaic results unveil the composition-dependent trend with a volcano-shaped plot of
The most attractive aspect of perovskite nanocrystals (NCs) for optoelectronic applications is their widely tunable emission wavelength, but it has been quite challenging to tune it without sacrificing the photoluminescence quantum yield (PLQY). In this work, we report a facile ligand-optimized ion-exchange (LOIE) method to convert room-temperature spray-synthesized, perovskite parent NCs that emit a saturated green color to NCs capable of emitting colors across the entire visible spectrum. These NCs exhibited exceptionally stable and high PLQYs, particularly for the pure blue (96%) and red (93%) primary colors that are indispensable for display applications. Surprisingly, the blue- and red-emissive NCs obtained using the LOIE method preserved the cubic shape and cubic phase structure that they inherited from their parent NCs, while exhibiting high crystallinity and high color-purity. Together with the parent green-emissive NCs, the obtained blue- and red-emissive NCs provided a very wide color gamut, corresponding to a Digital Cinema Initiatives-P3 of 140% or an International Telecommunication Union Recommendation BT.2020 of 102%. With the superior optical merits of these LOIE-manipulated NCs, a corresponding color conversion luminescence device provided a high external quantum efficiency (10.5%) and extremely high brightness (970 000 cd/m2). This study provides a valid route toward highly stable, extremely emissive, and panchromatic perovskite NCs with potential use in a variety of future optoelectronic applications.
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