Highly Sensitive Graphene–Semiconducting Polymer Hybrid Photodetectors with Millisecond Response Time

Chang, Phei‐Lang; Tsai, Yi-Chen; Shen, Shin‐Wei; Liu, Shangyi; Huang, Kuo‐Chung; Li, Chia‐Shuo; Chang, Hei-Ping; Wu, Chih‐I

doi:10.1021/acsphotonics.7b00626

Cited by 32 publications

(30 citation statements)

References 55 publications

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“…Under the same device concept, graphene–polymer semiconductor (P3HT or PTB7) hybrid phototransistors (Figure c) have exhibited responsivity exceeding 10 4 A W −1 and the fast temporal response of ≈7.8 ms. In this device, the use of a SAM functionalization to effectively remove surface traps and charged impurities between graphene and SiO 2 substrate further improved responsivity up to 10 5 A W −1 (Figure d) . Tan et al demonstrated that the utilization of piezoelectric (PZT) substrate can improve the photocurrent of graphene–P3HT photodetectors by 10 times compared to that based on SiO 2 substrate due to the enhanced separation of photogenerated electrons and holes under the electric field of the polarization from the piezoelectric substrate .…”

Section: D‐based Photodetectorsmentioning

confidence: 95%

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Recent Progress and Future Prospects of 2D‐Based Photodetectors

2018

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Conventional semiconductors such as silicon- and indium gallium arsenide (InGaAs)-based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, nontransparency, nonflexibility, and complementary metal-oxide-semiconductor (CMOS) incompatibility. New emerging two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from the visible to far-infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light-detection capabilities. Notably the facile integration of 2D photodetectors on silicon photonics or CMOS platforms paves the way toward high-performance, low-cost, broadband sensing and imaging modalities.

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Section: D‐based Photodetectorsmentioning

confidence: 95%

Section: D‐based Photodetectorsmentioning

confidence: 99%

Recent Progress and Future Prospects of 2D‐Based Photodetectors

2018

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“…Device Fabrication : The SiO 2 layers with a thickness of ≈300 nm were first thermally grown on heavily doped p‐type Si wafers, and then the SiO 2 substrates were coated with ODTS SAMs following the process reported in the literature . The CVD‐grown graphene sheet on copper foil was transferred to the ODTS substrates using the traditional PMMA‐assisted method.…”

Section: Methodsmentioning

confidence: 99%

Ultrasensitive Photoresponsive Devices Based on Graphene/BiI₃ van der Waals Epitaxial Heterostructures

Chang

et al. 2018

Adv Funct Materials

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In recent years, bismuth iodide (BiI 3 ), a layered metal halide semiconducting light absorber with a wide bandgap of ≈1.8 eV and strong optical absorption in the visible region, has received greater attention for photovoltaic applications. In this study, ultrasensitive visible-light photodetectors with graphene/ BiI 3 vertical heterostructures are achieved by van der Waals epitaxies. The BiI 3 films deposited on graphene show flatter morphologies and significantly better crystallinities than that of BiI 3 films on SiO 2 substrates, mainly due to weak van der Waals interactions at the graphene/BiI 3 interface. Hybrid photodetectors with highly crystalline graphene/BiI 3 heterostructures demonstrate an ultrahigh responsivity of 6 × 10 6 A W −1 , shot-noise-limited detectivity of 7 × 10 14 Jones, and a relatively short response time of ≈8 ms. Compared to most previously reported graphene-based hybrid photodetectors, these devices have comparable photosensitivities but a faster response speed and lower operation voltage, which is quite promising for ultralow intensity visible-light sensors. Moreover, the electronic structure and interfacial chemistry at the graphene/BiI 3 heterojunctions are investigated using photoemission spectroscopy. The results give clear evidence that no chemical interactions occur between graphene and BiI 3 , resulting in the van der Waals epitaxial growth, and the measured band bending consistently illustrates that a photoinduced charge transfer occurs at the graphene/BiI 3 interface.

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“…In contrast to organic molecules deposited under vacuum via the PVT method, solution‐processed organic molecules such as polymers, dye molecules, and biomolecules have been studied to facilitate device scalability as well as to achieve desirable properties . For example, a phototransistor based on the graphene/P3HT/poly[[4,8‐bis[(2‐ethylhexyl)oxy]benzo[1,2‐ b :4,5‐b′]dithiophene‐2,6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐ b ]thiophenediyl]] (PTB7) heterostructure has been developed for achieving high photoresponsivity of 10 5 A W −1 .…”

Section: Electronic and Optoelectronic Applicationsmentioning

confidence: 99%

2D–Organic Hybrid Heterostructures for Optoelectronic Applications

et al. 2019

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The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low-cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D-organic heterostructures-from their synthesis and fabrication to their state-of-the-art optoelectronic applications-is presented. Future challenges and opportunities associated with these heterostructures are highlighted.solution-processed on any substrate inexpensively and at relatively low temperatures, which is highly advantageous for their scale-up from fundamental studies to industrial-level production. [6][7][8][9][10] Initial examples of developed organic semiconductors include field-effect transistors (FETs), [4,5,[11][12][13][14][15] photodetectors (PDs), [5,16,17] photovoltaics (PVs), [5,16,18,19] light-emitting diodes (LEDs), [5,16,20] and so on. In spite of the demonstration of promising prototypes of organic semiconductors, their development and optimization for highperformance device applications remain a challenge. In particular, it is becoming increasingly difficult to impart suitable properties to individual materials and realize appropriate physical dimensions in order to satisfy increasing demands of multifunctionality for fundamental studies, device designs, and performance optimization. [21,22] Consequently, such challenges and opportunities can be addressed by performing multidimensional integration or hybridization of organic semiconductors with various types of materials having potentially novel functionalities and unique properties.2D van der Waals (vdW) materials are the most obvious candidate for such hybridization with organic semiconductors. [22,23] Since the discovery of graphene, which opened up new avenues ranging from fundamental studies to real-world applications, [24][25][26][27] several other groups of 2D vdW materials have also been discovered, such as hexagonal boron nitride (h-BN), [28,29] transition metal dichalcogenides (TMDCs), [23,[30][31][32][33][34] black phosphorus (BP), [35][36][37][38][39][40] borophene, [41][42][43] silicene, [43] and germanene. [43] The 2D structure has been demonstrated to possess several exceptional electrical, optical, mechanical, and thermal properties vis-à-vis its corresponding bulk counterpart. [22,25,27] Most importantly, from the viewpoint of hybridization with organic semiconductors, the atomically flat and dangling-bond-free surface of 2D vdW materials not only provides an ideal int...

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Highly Sensitive Graphene–Semiconducting Polymer Hybrid Photodetectors with Millisecond Response Time

Cited by 32 publications

References 55 publications

Recent Progress and Future Prospects of 2D‐Based Photodetectors

Recent Progress and Future Prospects of 2D‐Based Photodetectors

Ultrasensitive Photoresponsive Devices Based on Graphene/BiI₃ van der Waals Epitaxial Heterostructures

2D–Organic Hybrid Heterostructures for Optoelectronic Applications

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Highly Sensitive Graphene–Semiconducting Polymer Hybrid Photodetectors with Millisecond Response Time

Cited by 32 publications

References 55 publications

Recent Progress and Future Prospects of 2D‐Based Photodetectors

Recent Progress and Future Prospects of 2D‐Based Photodetectors

Ultrasensitive Photoresponsive Devices Based on Graphene/BiI3 van der Waals Epitaxial Heterostructures

2D–Organic Hybrid Heterostructures for Optoelectronic Applications

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Ultrasensitive Photoresponsive Devices Based on Graphene/BiI₃ van der Waals Epitaxial Heterostructures