In order to understand the void formation mechanism in electroplated Cu interconnects used in Si-semiconductor devices, microstructure of Cu/CuO/Cu layered films which were prepared on the Si 3 N 4 /Si substrates by the sputter-deposition technique was observed by transmission electron microscopy (TEM) and scanning ion microscopy (SIM). A high density of macro and micro voids were observed in the samples annealed in atmosphere containing hydrogen, whereas no voids were observed in the samples annealed in Ar atmosphere. TEM observation suggested that a small amount of oxygen contained in the Cu films (even a native oxide layer) formed water vapor at elevated temperatures, causing formation of the micro-voids when the samples were annealed in hydrogen atmosphere. The present result suggested that the void formation in the electroplated Cu films was induced by existence of impurities such as oxygen in the Cu films, and that the void growth was strongly enhanced by annealing in hydrogen atmosphere.

To understand a void formation mechanism in electroplated Cu interconnects used for Si-ULSI (ultra-large scale integrated) devices, microstructures of Cu films which were prepared by the electroplating technique using plating baths with or without organic additives were investigated by transmission electron microscopy (TEM). In the as-deposited samples, a high density of micro-voids were observed at the interface between a seed Cu layer and the electroplated Cu film which was prepared in the plating bath with organic additives. Growth of the micro-voids was observed in the samples annealed at elevated temperatures in an atmosphere containing hydrogen, whereas no void growth was observed in the samples annealed in Ar atmosphere. No void formation was observed in the Cu films which were prepared in the plating bath without organic additives. The present results suggested that the void formation in the electroplated Cu films was induced by existence of impurities such as organic additives or oxygen in the Cu films, and that the void growth was strongly enhanced by annealing in hydrogen.

Thin film of LuFe2O4, one of multiferroics, deposited on an yttria-stabilized zirconia substrate shows a unique interface structure, leading to an exchange bias effect. The thin film itself undergoes spin glass or cluster glass transition.