SUMMARYInterface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 10 12 cm −2 eV −1 , and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO 2 /nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.