Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode

Abstract

SUMMARYInterface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 10 12 cm −2 eV −1 , and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO 2 /nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.

Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure

“…The interface state density between the thin insulating layer and SiC was estimated from the current -voltage characteristics of MIS Schottky contact before and after the annealing [3,5], and are listed on Table I. The interface state density decreased after the annealing in the deposition chamber.…”

Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States

“…Nitride is another candidate for the insulating layer of SiC MIS devices. It has been difficult to get the nitride layer thicker than several nm by direct nitridation method [2,3,4].…”

Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode

“…The MIS Schottky diode was formed on SiC using the nitride layer as the interface layer. 5) The interface state density between the nitride layer and the SiC substrate was estimated from the ideality factor n determined from the current voltage curve of the MIS Schottky diode. Then, the SiO 2 film was deposited on the nitride layer to form an MIS diode.…”