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Single-crystalline (100) diamond films are grown using hot-filament chemical vapor deposition at 3000 C for the first time, which is achieved using tantalum filaments. A high growth rate of 10 μm h À1 is achieved, which is %50 times faster than that achieved at 2000 C. The Raman spectrum of the diamond film grown at high rate shows a peak at 1333 cm À1 with a full-width at halfmaximum of 2.8 cm À1 , which is comparable with that of the seed substrate (2.7 cm À1 ). The surfaces of grown films are smooth, without hillocks or nonepitaxial crystallites.

Single‐Crystalline DiamondIn article number http://doi.wiley.com/10.1002/pssa.201900244, Taira Tabakoya, Norio Tokuda, and co‐workers achieve high growth‐rate of single‐crystalline‐diamond with 3000 °C by using tantalum filament in a hot‐filament chemical vapor deposition system. The cover image expresses the process (the machine and inner chamber) and the results (the result of growth‐rate and the grown diamond substrate).