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We characterized OH-terminated diamond (111) surfaces which show step-terrace (ST) and bunching-step (BS) regions from contact potential difference (CPD) and current to investigate the relationships between surface topography and generation of interface states on the surfaces. The OH-termination was performed using water vapor annealing. The CPD and current measurements were conducted by conductive-probe AFM and Kelvin-probe force microscopy. The CPD and current were highly correlated with the surface topography. The I–V characteristics shows typical ideality factors (n) of about 1.5 and 2.0 in the ST region and the BS region, respectively. As the n were higher than that of an ideal Schottky contact (n = 1.0), we concluded that a metal insulator semiconductor diode structure, whose n increases as its interface state density increases, was formed. Considering that step density in the BS region was much higher than that in the ST region, the steps seemed to have generated the interface states.

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Single-crystalline (100) diamond films are grown using hot-filament chemical vapor deposition at 3000 C for the first time, which is achieved using tantalum filaments. A high growth rate of 10 μm h À1 is achieved, which is %50 times faster than that achieved at 2000 C. The Raman spectrum of the diamond film grown at high rate shows a peak at 1333 cm À1 with a full-width at halfmaximum of 2.8 cm À1 , which is comparable with that of the seed substrate (2.7 cm À1 ). The surfaces of grown films are smooth, without hillocks or nonepitaxial crystallites.