Insight into temperature impact of Ta filaments on high-growth-rate diamond (100) films by hot-filament chemical vapor deposition

Structural analyses of carbon films deposited at different total mass rates in a hot-filament CVD system

“…Therefore, the orientation of the zeroth ring electrons can be B75.31 along the north pole from north-sided tips. The peak at 2y B 91.51 is labeled by (5) in Fig. 5.…”

“…The properties of carbon films deposited using the CVD technique strongly depend on the process parameters. [2][3][4][5] The influence of the diamond nucleation density on the properties of carbon films is a hot topic. In depositing carbon films, the empirical optimization of the parameters would require millions of experiments.…”

“…The properties of carbon films deposited using the CVD technique strongly depend on the process parameters. 2–5…”

The Stability of Straightened Ta Filament During Chemical Vapor Deposition of Diamond Film

“…Brückner et al [ 8 ] further increased methane concentration to 16% to obtain a growth rate of about 16 μm h −1 with the addition of oxygen gas. Recently, Takamori et al [ 9 ] elevated Ta filament temperature to 3000 °C for the growth of a homoepitaxial diamond film on the single‐crystalline (100) diamond substrate, and a growth rate as high as 10 μm h −1 was obtained. Since Ta and Ta 2 C phases can form an eutecticum and the melting point is below 2900 °C, [ 10 ] more careful pretreatment with Ta filament is required to realize the deposition at the high temperature of 3000 °C.…”