received widespread attention during the past decades. It enables direct conversion between heat and electricity which has been used in space exploration, microelectronics, automobiles and so on. [1] However, the widespread application of thermoelectric devices in daily life is severely limited by the low thermoelectric conversion efficiency, which is mainly related to the dimensionless figure of merit ZT = α 2 σT/κ, where α, σ, and T are the Seebeck coefficient, electrical conductivity, absolute temperature, respectively and thermal conductivity κ is composed of electronic (κ e ) and lattice (κ l ) contributions. [2] Among the developed TE materials with high ZT (≥1), the V 2 VI 3 (V represents Group V elements Sb and Bi, and VI is Group VI elements S, Se and Te) compounds and derivatives have been intensively investigated for a long history since 1950s, which are widely considered as the benchmark of high performance TE materials in low-to mid-temperature range. [3] The outstanding TE performance of V 2 VI 3 materials represented by Sb 2 Te 3 , Bi 2 Te 3 , and Bi 2 Se 3 can be ascribed to its high power factor (PF) due to the suitable carrier concentration and low κ derived from the layered structure weakly bonded by van der Waals interaction. [3] Optimized by isoelectronic extrinsic doping, much improved TE performance with the maximum ZT around 1 has been The (Bi,Sb) 2 Te 3 (BST) compounds have long been considered as the benchmark of thermoelectric (TE) materials near room temperature especially for refrigeration. However, their unsatisfactory TE performances in wide-temperature range severely restrict the large-scale applications for power generation. Here, using a self-assembly protocol to deliver a homogeneous dispersion of 2D inclusion in matrix, the first evidence is shown that incorporation of MXene (Ti 3 C 2 T x ) into BST can simultaneously achieve the improved power factor and greatly reduced thermal conductivity. The oxygen-terminated Ti 3 C 2 T x with proper work function leads to highly increased electrical conductivity via hole injection and retained Seebeck coefficient due to the energy barrier scattering. Meanwhile, the alignment of Ti 3 C 2 T x with the layered structure significantly suppresses the phonon transport, resulting in higher interfacial thermal resistance. Accordingly, a peak ZT of up to 1.3 and an average ZT value of 1.23 from 300 to 475 K are realized for the 1 vol% Ti 3 C 2 T x /BST composite. Combined with the high-performance composite and rational device design, a record-high thermoelectric conversion efficiency of up to 7.8% is obtained under a temperature gradient of 237 K. These findings provide a robust and scalable protocol to incorporate MXene as a versatile 2D inclusion for improving the overall performance of TE materials toward high energy-conversion efficiency.