We fabricated an inverted-staggered amorphous In–Ga–Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage (V th) shift between 120 and 180 °C was as large as 4 V. In an analysis with two-dimensional (2D) numerical simulation, we reproduced the measured result by assuming two types of donor-like states as carrier generation sources. Furthermore, by ab initio molecular dynamics (MD) simulation, we determined the electronic structures of three types of a-IGZO structures, namely, “stoichiometric a-IGZO”, “oxygen deficiency”, and “hydrogen doping”.

We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In–Ga–Zn-oxide (IGZO) thin-film transistors (TFTs). Focusing on a passivation layer in an inverted staggered bottom gate structure, the threshold voltage of the TFTs can be controlled to have “normally-off” characteristics with suppressed variation by using a SiO x layer formed by sputtering with a low hydrogen content. In addition, small subthreshold swing S/S of 0.19 V/decade, high field-effect mobility µFE of 11.5 cm2 V-1 s-1, and threshold voltage V th of 1.27 V are achieved. The deposition conditions of the passivation layer and other processes are optimized, and variation in TFT characteristics is suppressed, whereby high-speed operation in gate and source driver circuits can be achieved. Using these driver circuits, the 4.0-in. QVGA AMOLED display integrated with driver circuits can be realized.

We found that, although alpha -cyano-4 -nitro-4-N, N -dimethylaminostilbene has larger hyperpolarizability than that of conventional 4 -N ,N -dimethylamino-nitrostilbene, the addition of the cyano group makes it much more easy to photo-isomerize, thus destroying the molecular ordering in poled chromophore doped polymers. Experimental evidence was obtained by monitoring the second-harmonic generation intensity, UV-Vis absorption spectrum, and FTIR spectrum. The photo-isomerization reaction process was monitored by optical pump induced absorption anisotropy measurement. Comparisons with the behaviour of a azobenzene dye are also made.

We have developed a 4.0 inch QVGA AMOLED display using amorphous In‐Ga‐Zn‐Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiOx with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.

We have developed a highly efficient top-emitting white OLED by employing a stable reflective anode structure and a p-doped buffer layer. Furthermore, combining the white OLED with color filters, we succeeded in fabricating a prototype of a highdefinition AMOLED display having highly reliable OS-FETs as the backplane.