No abstract

No abstract

We propose a simple method to fabricate SiO 2 diaphragms supported on a Si substrate by using the inward plasma etching. In this method, a Si substrate covered with SiO 2 was locally etched with the inward plasma from the Si side. When using a SiO 2 (280 nm)/Si (380 mm) substrate, a SiO 2 diaphragm with a diameter of ～50 mm was fabricated at the bottom of the bowl-like hole with an opening diameter of ～1.2 mm. This method does not require lithographic processes which are inevitable for the conventional microfabrication techniques and may be used to fabricate MEMS devices in the lab. . は じ め に